RU60280R n-channel advanced power mosfet symbol rating unit v dss 60 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 280 a i dp t c =25c 1120 a t c =25c 280 t c =100c 196 t c =25c 395 t c =100c 198 r ? jc 0.38 c/w r ? ja 62.5 c/w e as 900 mj ruichips semiconductor co., ltd rev. a? nov., 2016 1 www.ruichips.com thermal resistance-junction to case thermal resistance-junction to ambient drain-source avalanche ratings avalanche energy, single pulsed i d p d a w continuous drain current(v gs =10v) maximum power dissipation maximum junction temperature storage temperature range diode continuous forward current mounted on large heat sink 300 s pulse drain current tested absolute maximum ratings parameter common ratings (t c =25c unless otherwise noted) drain-source voltage gate-source voltage v features pin description to220 applications n-channel mosfet ? 60v/280a, r ds (on) =2.2m ? (typ.)@v gs =10v ? reliable and rugged ? ultra low on-resistance ? 100% avalanche tested ? 175c operating temperature ? lead free and green devices available (rohs compliant) ? uninterruptible power supplies ? synchronus rectification in dc/dc and ac/dc converters g d s d s g
RU60280R min. typ. max. bv dss drain-source breakdown voltage 60 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 2.2 3 m ? v sd diode forward voltage 1.2 v t rr reverse recovery time 30 ns q rr reverse recovery charge 370 nc r g gate resistance 1.3 ? c iss input capacitance 8150 c oss output capacitance 1300 c rss reverse transfer capacitance 800 t d(on) turn-on delay time 35 t r turn-on rise time 130 t d(off) turn-off delay time 190 t f turn-off fall time 63 q g total gate charge 245 q gs gate-source charge 31 q gd gate-drain charge 175 notes: ruichips semiconductor co., ltd rev. a? nov., 2016 2 www.ruichips.com nc test condition v dd =30v,i ds =75a, v gen =10v,r g =2.5 ? v ds =48v, v gs =10v, i ds =20a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 75a. limited by t jmax , i as =60a, v dd = 48v, r g = 50 ? , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. i sd =20a, dl sd /dt=100a/s v gs =0v, v ds =30v, frequency=1.0mhz dynamic characteristics v gs =0v,v ds =0v,f=1mhz gate charge characteristics symbol i dss parameter zero gate voltage drain current unit a pf ns v ds =v gs , i ds =250a v gs =25v, v ds =0v v gs =10v, i ds =75a diode characteristics i sd =75a, v gs =0v electrical characteristics (t c =25c unless otherwise noted) RU60280R static characteristics v gs =0v, i ds =250a v ds =60v, v gs =0v
RU60280R device marking package packaging quantity reel size tape width RU60280R RU60280R to220 tube 50 - - ruichips semiconductor co., ltd rev. a? nov., 2016 3 www.ruichips.com ordering and marking information
RU60280R ruichips semiconductor co., ltd rev. a? nov., 2016 4 www.ruichips.com typical characteristics 0 50 100 150 200 250 300 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current v gs =10v limited by package 0 2 4 6 8 10 012345678910 r ds(on) - on - resistance (m ? ) v gs - gate-source voltage (v) drain current i ds =75a 0 50 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 175 p d -power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 i d - drain current (a) v ds - drain-source voltage (v) safe operation area 10s 100s 1ms 10ms dc r ds(on) limited t c =25c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 zthjc - thermal response (c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 0.38c/w
RU60280R ruichips semiconductor co., ltd rev. a? nov., 2016 5 www.ruichips.com typical characteristics 0 70 140 210 280 350 012345 i d - drain current (a) v ds - drain-source voltage (v) output characteristics 5v 6v 10v 7v 8v 0 2 4 6 8 0 40 80 120 160 200 r ds(on) - on resistance (m ? ) i d - drain current (a) drain-source on resistance v gs =10v 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain-source on resistance v gs =10v i d =50a t j =25c rds(on)=2.2m ? 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-drain voltage (v) source-drain diode forward t j =25c t j =175c 0 2000 4000 6000 8000 10000 12000 110100 c - capacitance (pf) v ds - drain-source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 v gs - gate-source voltage (v) q g - gate charge (nc) gate charge v ds =30v i ds =20a 9v
RU60280R ruichips semiconductor co., ltd rev. a? nov., 2016 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU60280R ruichips semiconductor co., ltd rev. a? nov., 2016 7 www.ruichips.com package information to220 1 1 2 l1 q d1 l2 min nom max min nom max min nom max min nom max a 4.30 4.54 4.77 0.169 0.179 0.188 p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.15 1.30 1.40 0.045 0.051 0.055 e a2 1.90 2.25 2.60 0.075 0.089 0.102 e1 b 0.60 0.80 1.00 0.024 0.031 0.039 h1 6.30 6.50 6.80 0.248 0.256 0.268 b2 1.17 1.28 1.72 0.046 0.050 0.068 l 12.70 13.18 13.65 0.500 0.519 0.53 7 c 0.40 0.50 0.60 0.016 0.020 0.024 l1 * * 3.95 * * 0.156 d 15.40 15.70 16.00 0.606 0.618 0.630 l2 0.098 ref d1 8.96 9.21 9.46 0.353 0.363 0.372 p 3.50 3.60 3.75 0.138 0.142 0.148 dep * * 0.30 * * 0.012 q 2.70 2.80 3.20 0.106 0.110 0.126 e 9.66 9.97 10.28 0.380 0.393 0.405 1 5 7 9 5 7 9 e1 * 8.70 * * 0.343 * 2 1 3 5 1 3 5 e2 9.80 10.00 10.20 0.386 0.394 0.402 symbol mm inch symbol mm inch 0.10 bsc 2.54 bsc 5.08 bsc 0.20 bsc 2.50 ref
RU60280R ruichips semiconductor co., ltd rev. a? nov., 2016 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park, nanshan district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
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